Physical implementation

The 8080 chip ambit acclimated non-saturated accessory amount nMOS gates, ambitious added voltages (for the load-gate bias). It was bogus in a silicon aboideau action application a minimum affection admeasurement of 6 µm. A individual band of metal was acclimated to interconnect the about 6,000 transistors2 in the design, but the college attrition polysilicon layer, which appropriate college voltage for some interconnects, was implemented with transistor gates. The die admeasurement was about 20 mm².